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RFD16N06LESM
Typical Performance Curves
1.2
Unless Otherwise Specified
20
1.0
15
0.8
0.6
10
0.4
5
0.2
0
0
25
50 75 100
125
150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
T C , CASE TEMPERATURE ( o C)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
200
100
T C = 25 o C
T J = MAX RATED
500
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
100 μ s
100
V GS = 10V
I = I 25
(
175 - T C
150
)
10
OPERATION IN THIS
1ms
V GS = 5V
AREA MAY BE
LIMITED BY r DS(ON)
10ms
TRANSCONDUCTANCE
MAY LIMIT CURRENT
1
1
10
V DSS MAX = 60V
100
10
10 -6
10 -5
IN THIS REGION
10 -4 10 -3
10 -2
10 -1
10 0
10 1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
100
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
STARTING T J = 25 o C
STARTING T J = 150 o C
80
T C =25 o C
V GS = 10V
V GS = 5V
V GS = 4.5V
60
10
40
V GS = 4V
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
20
V GS = 3V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX.
1
0.01
0.1
1
10
0
0
1.5
3.0
4.5
6.0
7.5
t AV , TIME IN AVALANCHE (ms)
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
?2002 Fairchild Semiconductor Corporation
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
RFD16N06LESM Rev. C0
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